Researchers are studying graphene and ammonia to develop high-speed, high-capacity random access memory. The team engineered and tested improvements in the performance of a memory structure known as a ferroelectric tunnel junction.
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Physicists and chemists work to improve digital memory technology
Researchers are studying graphene and ammonia to develop high-speed, high-capacity random access memory. The team engineered and tested improvements in the performance of a memory structure known as a ferroelectric tunnel junction.
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